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Thermco 5200 Horizontal Diffusion Furnace

Mr. Zheng 2026-08-04 13:44:52 0 Views

The Thermco 5200 is a horizontal production diffusion furnace platform for semiconductor, MEMS, photovoltaic and related substrate processing. The available listing identifies the equipment for wafers up to 150 mm in diameter.

The 5200 platform can be configured with two to four independent process tubes. Individual tubes may be assigned to oxidation, diffusion, annealing or compatible LPCVD processes, depending on the installed tube materials, gas systems and exhaust configuration.

Thermco 5200 horizontal diffusion furnace

Thermco 5200 Main Specifications

ManufacturerThermco Systems
Model5200
Equipment TypeHorizontal Multi-Tube Diffusion Furnace
Maximum Substrate SizeUp to 150 mm
Platform Tube ConfigurationTwo to four process tubes, depending on installed system
Maximum Flat ZoneUp to 1,100 mm
Published Operating Range200–1,350°C, depending on heater and process configuration
Heating ZonesThree independently controlled furnace zones
Optional Ramp RateUp to 25°C per minute with the appropriate fast-ramp option
Optional Cooling RateUp to 20°C per minute with the appropriate fast-cooling option
Process ControlThermco furnace control system; installed controller version must be confirmed
ConditionUsed semiconductor equipment
AvailabilitySubject to current stock, tube configuration and inspection confirmation

Key Equipment Features

  • Horizontal furnace platform supporting wafers up to 150 mm

  • Configurable two-to-four-tube system architecture

  • Up to 1,100 mm temperature flat zone

  • Three independently controlled heating zones

  • Individual tubes can be configured for different thermal processes

  • Compatible with manual, semi-automatic or configuration-dependent automated loading

Typical Applications

Published Thermco 5200 applications include wet and dry oxidation, dopant diffusion, forming-gas annealing, high-temperature drive-in and other thermal treatments. Properly configured tubes may also support silicon nitride, polysilicon, TEOS, LTO or related LPCVD processes.

The available machine should only be promoted for processes supported by its installed tube, gas cabinet, pressure system and exhaust equipment. Different tubes in the same mainframe may have different process histories.

Thermco 5200 horizontal furnace process tubes

Used Equipment Configuration and Inspection

The published specifications describe the configurable 5200 platform. The available used system may contain fewer than four tubes, different heater types, an older control system or process-specific gas and exhaust equipment.

Before quotation, customers should confirm the number of installed tubes, tube dimensions, heater condition, temperature range, quartzware, wafer boats, loading system, gas panels, MFCs, pressure controls, pumps, exhaust treatment and controller version.

Thermco 5200 furnace control and gas system

Request Thermco 5200 Information

Contact our team to check the current availability of the used Thermco 5200. Please provide your wafer size, intended process, required number of furnace tubes, target temperature range, process gases, destination country and installation schedule.

Contact us for current equipment photos, tube configuration, process history, inspection status and quotation.

Frequently Asked Questions

What wafer size can the Thermco 5200 process?

The published 5200 platform supports semiconductor and related substrates up to 150 mm in diameter.

How many furnace tubes does the Thermco 5200 have?

The platform can be configured with two to four process tubes. The number installed on the available machine must be confirmed.

What processes can the Thermco 5200 perform?

Possible processes include oxidation, diffusion, annealing and selected LPCVD applications. Each installed tube must be checked for its assigned process and gas configuration.

Does every Thermco 5200 operate up to 1,350°C?

The published platform range extends to 1,350°C, but the actual maximum depends on the installed heater, thermocouples, tube materials and process configuration.

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