AG Associates Heatpulse 8108 RTP System
The AG Associates Heatpulse 8108 is a single-wafer rapid thermal processing system used for short, controlled high-temperature semiconductor processes. The available listing identifies the system for 150 mm and 200 mm wafers.
The Heatpulse platform rapidly heats a wafer with tungsten lamp arrays and controls the process temperature through a thermocouple or pyrometer-based closed loop. Rapid cooling limits the total thermal budget compared with longer conventional furnace cycles.
AG Heatpulse 8108 Main Specifications
| Manufacturer | AG Associates |
|---|---|
| Product Family | Heatpulse |
| Model | 8108 |
| Equipment Type | Single-Wafer Rapid Thermal Processing System |
| Supported Wafer Sizes | Up to 200 mm; available listing identifies 150 mm and 200 mm wafers |
| Heating Method | Upper and lower tungsten lamp arrays |
| Temperature Measurement | Thermocouple or pyrometer, depending on installed configuration |
| Temperature Control | Closed-loop process temperature control |
| Cooling Method | Cold-wall heat-exchanger cooling in the published platform |
| Published Process Applications | Annealing, controlled diffusion, oxidation, activation and silicide formation |
| Process Atmosphere | Dependent on installed gas panel, chamber and options |
| Condition | Used semiconductor equipment |
| Availability | Subject to current stock, inspection and configuration confirmation |
Key Equipment Features
Single-wafer rapid thermal processing
Published support for substrates up to 200 mm
Fast tungsten-lamp wafer heating
Closed-loop thermocouple or pyrometer temperature control
Cold-wall design for rapid post-process cooling
Suitable for research, pilot production and compatible manufacturing processes
Typical Applications
The Heatpulse 8108 may be used for post-implant annealing, dopant activation, controlled diffusion, rapid thermal oxidation, silicide or salicide formation, reflow and other short-duration thermal processes.
Process compatibility depends on wafer material, chamber quartzware, temperature sensor, lamp condition, gas delivery, oxygen monitoring and the available recipe set. The required process should be reviewed against the installed machine configuration.
Used Equipment Configuration and Inspection
Heatpulse 8108 systems may differ in temperature sensor, gas panel, oxygen-monitoring option, wafer holder, control software and facility requirements. These components should be identified on the available machine before quotation.
Important inspection points include the tungsten lamps, reflectors, quartz chamber, thermocouple or pyrometer, wafer lift and rotation components, cooling system, gas valves, safety interlocks, controller, recipes and current power-on status.
Request AG Heatpulse 8108 Information
Contact our team to check the current availability of the used AG Associates Heatpulse 8108. Please provide your wafer size, substrate material, target annealing or oxidation process, required atmosphere, destination country and installation schedule.
Contact us for current photos, temperature-control configuration, chamber condition, inspection status and quotation.
Frequently Asked Questions
What wafer size can the Heatpulse 8108 process?
The Heatpulse 8108 platform supports substrates up to 200 mm. The installed wafer holder must match the required diameter.
What is the difference between RTP and a batch furnace?
RTP heats one wafer rapidly for a short process cycle, while a conventional diffusion furnace normally heats a batch of wafers over a longer thermal cycle.
What processes can the Heatpulse 8108 perform?
Published applications include annealing, dopant activation, oxidation, controlled diffusion, reflow and silicide formation.
Does every 8108 use the same temperature sensor?
No. Available systems may use a thermocouple, pyrometer or process-specific sensing configuration. The installed sensor should be confirmed before selecting the equipment.
